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K7I323682C - 1Mx36 & 2Mx18 DDRII CIO b2 SRAM

K7I323682C_2205002.PDF Datasheet


Part No.	K7I323682C K7I321882C
Description	1Mx36 & 2Mx18 DDRII CIO b2 SRAM
File Size	413.81K / 18 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Related Part Number

PART	Description	Maker
K7I323682C K7I321882C	1Mx36 & 2Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M	2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
K7B321825M K7B323625M K7B323625M-QC6575	Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk 1Mx36 & 2Mx18 Synchronous SRAM 1Mx36 & 2Mx18 Synchronous SRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
K7P323666M K7P321866M	1Mx36 & 2Mx18 SRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
K7D321874C K7D323674C	1Mx36 & 2Mx18 SRAM	Samsung semiconductor
K7D323674C-HC33 K7D323674C-GC33 K7D323674C-GC40 K7	1Mx36 & 2Mx18 SRAM	Samsung semiconductor
K7K1636U2C K7K1618U2C	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7I163682B06 K7I161882B	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7I643682M07 K7I641882M	2Mx36 & 4Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7A323600M K7B323625M-QC75 K7A321800M K7A321800M-Q	1Mx36 & 2Mx18 Synchronous SRAM	Samsung Electronic SAMSUNG[Samsung semiconductor]
K7B323625M K7A321800M-QC14 K7B323625M-QC6575 K7A32	1Mx36 & 2Mx18 Synchronous SRAM	Samsung Electronic SAMSUNG[Samsung semiconductor]
K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F	1Mx36 & 2Mx18 QDRTM II b4 SRAM	SAMSUNG SEMICONDUCTOR CO. LTD.

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